Home » All Products » Discrete Semiconductor Products » Transistors (BJT) - Single, Pre-Biased » PDTD113ES,126
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Product Category : Transistors (BJT) - Single, Pre-Biased
Description : TRANS PREBIAS NPN 500MW TO92-3
Marketing Price : N/A
Our Price : Quote by Email ([email protected])
Datasheet : 
PDTD113ES,126.pdf
Condition : New
Country Of Origin : -
| Internal Part Number | EIS-PDTD113ES,126 | |
| Condition | New & Unused, Original Sealed | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 2,000 | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors (BJT) - Single, Pre-Biased | |
| Series | - | |
| Packaging | Tape & Box (TB) | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) (Ohms) | 1k | |
| Resistor - Emitter Base (R2) (Ohms) | 1k | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 500mW | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads | |
| Supplier Device Package | TO-92-3 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | PDTD113ES,126 | |
| Related Links | PDTD11, PDTD113ES,126 Datasheet | |
