PDTD113ES,126

Product Category : Transistors (BJT) - Single, Pre-Biased

Description : TRANS PREBIAS NPN 500MW TO92-3

Marketing Price : N/A

Our Price : Quote by Email ([email protected])

Datasheet : PDTD113ES,126.pdf

Condition : New

Country Of Origin : -

Availability of PDTD113ES,126

Available Quantity : 1002 Pieces
Date code : Newest
Delivery Time : Ship within 1 day if urgen
Shipping Methods : FEDEX DHL UPS
Manufacturer lead time : 8-10 Weeks
Payment Methods : Bank Transfer / Paypal
QUANTITY : Buy
Email : [email protected]

EIS is the stocking distributor of PDTD113ES,126, we specialize in all series NXP Semiconductors/Freescale Semiconductor, Inc. components. PDTD113ES,126 can be shipped within 24 hours after order. If you have any demands for PDTD113ES,126. Please kindly send an inquiry by email. Our email is [email protected].

Internal Part Number	EIS-PDTD113ES,126
Condition	New & Unused, Original Sealed
Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Production Status (Lifecycle)	Obsolete / Discontinued
Condition	New & Unused, Original Sealed
Standard Package	2,000
Category	Discrete Semiconductor Products
Family	Transistors (BJT) - Single, Pre-Biased
Series	-
Packaging	Tape & Box (TB)
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	500mA
Voltage - Collector Emitter Breakdown (Max)	50V
Resistor - Base (R1) (Ohms)	1k
Resistor - Emitter Base (R2) (Ohms)	1k
DC Current Gain (hFE) (Min) @ Ic, Vce	33 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)	500nA
Frequency - Transition	-
Power - Max	500mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92-3
Weight	0.001 KG
Application	Email for details
Alternative Part (Replacement)	PDTD113ES,126
Related Links	PDTD11, PDTD113ES,126 Datasheet