PDTD123YS,126 Image

PDTD123YS,126

Product Category : Transistors (BJT) - Single, Pre-Biased

Description : TRANS PREBIAS NPN 500MW TO92-3

Marketing Price : N/A

Our Price : Quote by Email ([email protected])

Datasheet : PDTD123YS,126.pdf

Condition : New

Country Of Origin : -

Availability of PDTD123YS,126
  • Available Quantity : 1002 Pieces
  • Date code : Newest
  • Delivery Time : Ship within 1 day if urgen
  • Shipping Methods : FEDEX DHL UPS
  • Manufacturer lead time : 8-10 Weeks
  • Payment Methods : Bank Transfer / Paypal
  • QUANTITY : Buy
  • Email : [email protected]
EIS is the stocking distributor of PDTD123YS,126, we specialize in all series NXP Semiconductors/Freescale Semiconductor, Inc. components. PDTD123YS,126 can be shipped within 24 hours after order. If you have any demands for PDTD123YS,126. Please kindly send an inquiry by email. Our email is [email protected].
Internal Part NumberEIS-PDTD123YS,126
ConditionNew & Unused, Original Sealed
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
Standard Package2,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingTape & Box (TB)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)500mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)PDTD123YS,126
Related LinksPDTD12, PDTD123YS,126 Datasheet
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